LMG3526R030, LMG3522R030 - GaN FET

Texas Instruments

LMG3526R030 Datasheet Preview — This datasheet PDF includes multiple part numbers: LMG3526R030, LMG3522R030. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	LMG3526R030, LMG3522R030
Manufacturer	Texas Instruments ↗
File Size	3.11 MB
Description	GaN FET
Datasheet	LMG3522R030-etcTI.pdf
Note	This datasheet PDF includes multiple part numbers: LMG3526R030, LMG3522R030. Please refer to the document for exact specifications by model.

LMG3526R030 Product details

Description

The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Features

650V GaN-on-Si FET with integrated gate driver.
Integrated high precision gate bias voltage.
200V/ns FET hold-off.
2MHz switching frequency.
20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation.
Operates from 7.5V to 18V supply.
Robust protection.
Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response.
Withstands 720V surge while hard-switching.

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Published: Oct 26, 2024 |